The advantages of Schottky diodes are low impedance, small forward voltage drop, and fast recovery speed, so they are commonly used in high-frequency high current rectification and voltage drop protection circuits.
The Schottky diode structure has low series resistance and strong nonlinearity, making it suitable for RF circuits.
Unlike ordinary diodes, it adds a base region I between P-type and N-type silicon materials to form a P-I-N silicon wafer.
What are the internal circuits of the bridge stack? What are the differences in the internal structure of the bridge stack and the polarity of the DC output voltage?
Review of Guangdong Youfeng Microelectronics 2024 Munich Shanghai Electronics Exhibition
What is the principle of pressure drop testing? What is the difference between Schottky diode voltage drop and common misconceptions?
